LAUSR

Abstract Tunable emission wavelengths from 415 nm to 600 nm were demonstrated in coaxial GaInN/GaN multiple quantum shells (MQS) grown on three-dimensional nanostructures. Uniform aperture arrays with different diameters and pitches were patterned on GaN/sapphire substrates by nanoimprint and e-beam lithography. Thereafter, the coaxial GaInN/GaN MQS structures were selectively grown on the nanostructures using metalorganic chemical vapor deposition (MOCVD). To achieve long wavelength emissions, a detailed investigation in terms of height, filling factor, diameter of apertures, and pitch was performed for clarifying the In incorporation in nanostructures. Scanning transmission electron microscopy (STEM) features demonstrate that the diffusion of precursors on SiO2 mask area plays an important role in the coaxially growth of MQS structures on naonopyramids. A growth model based on the diffusion length and pitch was proposed to explain the experimental results. It was clarified that the probability of In incorporation was promoted in nanopyramids with a small pitch (less than 3 times of the diffusion length), wherein direct impinged adatoms on nanopyramids also diffused and participated in the growth on the neighbor. With a decrease in the intervals of aperture patterns, emission longer than 600 nm can be achieved for white and micro light-emitting diodes.