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Origin of pure and C doped borophene stability and its activity for OER

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Abstract In borophene, vacancy is a major reason for stability. However, a detailed understanding relating to vacancy and electronic property remains unexplored. Using Density Functional Theory (DFT) the effect of… Click to show full abstract

Abstract In borophene, vacancy is a major reason for stability. However, a detailed understanding relating to vacancy and electronic property remains unexplored. Using Density Functional Theory (DFT) the effect of vacancy and doping on stability, electronic and catalytic properties of borophene is addressed in this work. It is shown how vacancy increases σ-electrons and decreases π-electrons of the neighboring boron atoms with the magnitude decreasing from 4 to 6-coordinated atoms, thereby contributing to their stability. The role of single and dual carbon doping on σ- and π-occupancy is explored. In addition, we have shown that dual carbon doping on β12-borophene analogue reduces the overpotential for oxygen evolution reaction (OER). We observed that the charge deficient boron atom helps in the reduction of oxygen binding and can decrease the overpotential towards OER. Overall, this work would help in fundamental understanding towards borophene stability and aid in choosing the suitable dopant for catalytic applications considering the stability.

Keywords: doped borophene; vacancy; pure doped; origin pure; stability; borophene stability

Journal Title: Applied Surface Science
Year Published: 2021

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