LAUSR

Abstract In this paper we unveil of a new structure in which a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is paralleled with a Tunneling Field Effect Transistor (TFET) to increase on-state current. In order to enhance tunneling current injection rate in the device, workfunction engineering in gate and substrate electrodes and doping engineering in channel (source pocket) are utilized. For further on-state current enhancement of device, thermionic injection mechanism is used by incorporating a MOSFET in the structure. In addition, hetero gate dielectric is used to reduce parasitic capacitances. Our analysis show PTM-FET transistor has several excellences in comparison to DW HGD SP TFET in terms of transconductance, Ion/Ioff current ratio, short channel effects like DIBL, Early voltage, maximum transducer power gain, unilateral power gain, gain bandwidth product, unity gain frequency and parasitic capacitances. The mentioned advantages for PTM-FET transistor can be a window of utilizing this device in both low power and high performance integrated circuit applications.