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Abstract Large-scale growth of mostly monolayer molybdenum disulfide (MoS 2 ) on quartz, sapphire, SiO 2 /Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth… Click to show full abstract
Abstract Large-scale growth of mostly monolayer molybdenum disulfide (MoS 2 ) on quartz, sapphire, SiO 2 /Si, and waveguide substrates is demonstrated by chemical vapor deposition with the same growth parameters. Centimeter-scale areas with large flakes and films of MoS 2 on all the growth substrates are observed. The atomic force microscopy and Raman measurements indicate the synthesized MoS 2 is monolayer with high quality and uniformity. The MoS 2 field effect transistors based on the as-grown MoS 2 exhibit carrier mobility of 1–2 cm 2 V −1 s −1 and On/Off ratio of ∼10 4 while showing large photoresponse. Our results provide a simple approach to realize MoS 2 on various substrates for electronics and optoelectronics applications.
Journal Title: Current Applied Physics
Year Published: 2019
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