Abstract Magnetoresistance (MR) of pure amorphous carbon thin films deposited by pulsed laser deposition at various deposition temperatures was studied. Maximum MR of 46% was observed at 2 K under the… Click to show full abstract
Abstract Magnetoresistance (MR) of pure amorphous carbon thin films deposited by pulsed laser deposition at various deposition temperatures was studied. Maximum MR of 46% was observed at 2 K under the magnetic field of 7 T for the sample deposited at temperature of 500 °C. No tendency of MR saturation was observed up to 7 T. The MR decreases rapidly with the increase in measurement temperature and vanishes after 40 K. The transport mechanism of all the samples follow Efros-Shklovskii variable range hopping model. The characteristics temperature decreasing from 2540 K to 1290 K and localization length increasing from 5.3 nm to 10.7 nm with increasing fraction of C(sp2) from 72% to 84%. The lower disorder degree may results in higher MR.
               
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