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Abstract A graphitic capping layer was successfully formed on top of Cu interconnects at room temperature, using a pulsed KrF laser. The change in temperature of the Cu line was… Click to show full abstract
Abstract A graphitic capping layer was successfully formed on top of Cu interconnects at room temperature, using a pulsed KrF laser. The change in temperature of the Cu line was maintained below 380 °C during laser irradiation with a fluence of 312.5 mJ/cm2. The resistance and critical current density of graphitic layer-capped Cu interconnects were improved by 2.8% and 5.2%, respectively. The lifetime of graphitic layer-capped Cu interconnects under a constant current stress was improved by 223%.
Keywords:
laser;
capping layer;
graphitic capping;
layer;
krf laser;
pulsed krf
Journal Title: Carbon
Year Published: 2017
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Journal Title: Carbon
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!