LAUSR

Natural-superlattice-structured/intergrowth CaBi 2 Nb 2 O 9 -Bi 4 Ti 3 O 12 (CBNO-BIT) ferroelectric thin films were successfully prepared via a magnetron sputtering process. XRD and TEM analysis revealed the [Bi 2 O 2 -(CaNb 2 O 7 )-Bi 2 O 2 -(Bi 2 Ti 3 O 10 )] n intergrowth structure of the film, as well as a (200)/(020) texture. XPS and EDS results confirmed that the film composition is close to the chemical stoichiometry. With its microstructure being successfully tailored at the nanoscale, the CBNO-BIT film exhibits good electrical properties, including a large dielectric constant ( e r ∼390), a high piezoelectric coefficient ( d 33 ∼90 pm/V) as well as a high energy storage density ( W E ∼76 J/cm 3 ). Finally, the intergrowth nature of the film was verified by the measured temperature-dependent dielectric response (C-T).