Abstract In this study, the Sn, Li and Li-Ni doped ZnO nanosheet were studies using density functional theory implemented in Quantum espresso package. The electrical and optical properties of these… Click to show full abstract
Abstract In this study, the Sn, Li and Li-Ni doped ZnO nanosheet were studies using density functional theory implemented in Quantum espresso package. The electrical and optical properties of these doping effects on ZnO nanosheet were studied using Heyd-Scuseria-Ernzerhof (HSE) hybrid functional. The dopant ions were substituted on Zn sites in hexagonal ZnO nanosheets. The results showed that, for the n - t ype doping, the Sn-doped ZnO nanosheet is the most stable under O-poor condition compared with the Li doping and Li-Ni co-doping and has donor level at 2.29 eV below conduction band minimum (CBM). On the other hand, for the p -type doping, Li-doped ZnO nanosheet has acceptor level at 0.68 eV above valence band maximum (VBM) and is more energetic favorable than the Li-Ni doped ZnO in O-poor condition. Therefore, this density functional investigation shows that the high stability of ZnO nanosheets can be achieved for both p -type and n -type conductivity depending on the designed growth condition. These results then suggest the possibility to produce both conductive types in ZnO nanosheet for implementation as p-n junction in miniaturized electronics devices.
               
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