LAUSR

Abstract BaZr 0.15 Ti 0.85 O 3 ceramics are prepared via the conventional solid state reaction method. The effects of Bi 2 O 3 ·3TiO 2 doped on dielectric properties and breakdown strength of BaZr 0.15 Ti 0.85 O 3 ceramics are systematically discussed. Doping of Bi 2 O 3 ·3TiO 2 can obviously improve the breakdown strength and reduce the dielectric loss of the material. It is attributed to the Bi 3+ substituted Ba 2+ is an unequal ion substitution, and two Bi 3+ substitute three Ba 2+ to produce an A vacancy, thereby increasing the lattice energy and promoting the diffusion and migration of the particles during the sintering process, promoting the sintering and reducing the sintering temperature. However, the dielectric constant of the material is decreased. When the amount of Bi 2 O 3 ·3TiO 2 is 12 mol%, the minimum dielectric loss tanδ = 0.0009, the maximum breakdown strength is E b = 15.09 kV/mm, the insulation resistivity is 3.52 × 10 11  Ω cm. The energy storage density of the BaZr 0.15 Ti 0.85 O 3 ceramic samples doped with Bi 2 O 3 ·3TiO 2 varies from 0.008 J/cm 3 to 0.012 J/cm 3 .