LAUSR

Abstract It is a challenge to synthesize ultra-pure one-dimensional Ge3N4 nanomaterials because the current synthetic approaches are difficult to avoid oxygen to form GeOx. In this paper, we provide a novel approach to synthesize ultra-pure Ge3N4 nanowires by directly nitriding nanocrystalline Ge powder at a relatively lower temperature of 600 °C in NH3 atmosphere. The nanocrystalline Ge powder is prepared using a liquid nitrogen cryomilling method, and an amorphous GeNx layer is formed on the surface of Ge powder to significantly block oxidation. The obtained single-crystal α-Ge3N4 nanowires are ~ 80 nm in width and several tens of micrometers in length. The photoluminescence property of α-Ge3N4 nanowires has also been investigated. The result exhibits a blue-green luminescence property with the main peak at 440 nm, which is originated from the electronic transition from the conduction band to valence band.