LAUSR

Abstract 10 nm-thick ferroelectric (FE) HfO2 films with 1.5 mol% yttrium-doping were fabricated by mid-frequency reactive magnetron co-sputtering deposition on bare Si and underlying metal Hf. Yttrium was incorporated into the HfO2 layers by simultaneously sputtering from Y and Hf metal targets under oxygen atmosphere. The effects of interfacial layer on structural and electrical properties of Y:HfO2 films have been systemically studied using high-resolution transmission electron microscopy (TEM), X-ray diffraction (XRD) and electrical measurements. Based on TEM and XRD measurements, the presence of a non-centrosymmetric orthorhombic phase which is responsible for ferroelectricity in yttrium-doped HfO2 (Y:HfO2) films could be detected. As an initial protective layer, the ultra-thin metal Hf (~1 nm) layer covers the silicon surface and prevents the native oxide growth during the deposition and post-annealing process. Results reveal that the thickness of interfacial layer is significantly reduced by deposit a Hf buffer layer and a remanent polarization Pr of up to 14 μC/cm2 can be detected in P-V measurement. The strategy of using Hf buffer layer to improve electrical properties of HfO2 film is a feasible method for the fabrication of metal-insulator-semiconductor (MIS) capacitor based on FE-HfO2/Si gate stack.