LAUSR

Abstract Investigations on dielectric properties of N 2 -sintered TiO 2 ceramic samples followed by chemically oxidized in H 2 O 2 aqueous solution with different time spans were performed in the frequency range of 10 2 –10 6 Hz. The results reveal that the dielectric properties strongly depend on the lengths of oxidizing time. An optimum oxidizing time of 12–16 h gives rise to superior dielectric properties with the permittivity of 12589 and the loss factor of 0.34 at 100 Hz. The time effect is attributed to the formation of an insulating layer at grain boundaries. Chemical oxidation proves to be a facile strategy to manipulate the insulating layer and opens a new way to modify the dielectric permittivity of versatile oxides.