LAUSR

Abstract Silicon nitride (Si3N4) films have received great attention not only as dielectric materials for the gate dielectric of transistors and the insulator of capacitors, but also as a buffer layer and etch-stop layer for the semiconductor industry. As the applications of Si3N4 film increase, the necessity of investigating a novel deposition process applicable at low temperature has emerged. In this regard, the plasma-enhanced atomic layer deposition (PEALD) technique is attractive as a promising process; however, the Si3N4 film deposition process at growth temperatures less than 150 °C using PEALD has not been investigated. In this work, the growth behavior and chemistry of SiNx (x