LAUSR

Abstract To study the double doping effect on PZT, following thin films were prepared with stoichiometric compositions of Pb(Zr0·52Ti0·48)O3(PZT), Pb0·92La0·08(Zr0·52Ti0·48)0.98O3(PLZT) and Pb0·92(La0.5Yb0.5)0·08(Zr0·52Ti0·48)0.98O3(PLYZT) by chemical solution deposition method. XRD results revealed tetragonal crystal structure of all the three thin film compositions with significant changes in lattice parameters for La3+and La3+-Yb3+ doped PZT film. Raman study confirmed XRD results. The influence of structural changes on ferroelectric behavior was investigated by studying ferroelectric switching current, remanent polarization and coercive field. An increase in ferroelectric switching current and decrease in coercive field was observed in double doped (La3+ and Yb3+) PZT thin films than the pure one. This result indicates easy domain switching in doped PZT thin films. The double doping has reduced leakage current in PZT by compensating oxygen vacancy and thereby improved the polarization fatigue.