LAUSR

Abstract The excellent energy storage and pulse charge-discharge performance ceramics with high temperature stability and optical transmissivity are competitive for the development of electronic devices. In this work, comprehensive improved performances are simultaneously realized in DyxSr1-xTiO3 (DST) ceramics through defect and interface engineering. Meanwhile, increased high insulation grain boundary and reduced carrier mobility promote the increase of grain boundary resistance, and the increase of grain resistance primarily originates from the fact that D y T i ' can easily attract oxygen vacancy, forming defect dipoles and restraining the movement of oxygen vacancies. Additionally, the relative density of ceramics is increased by sintering in O2 and doping Dy ions. Hence, x = 0.008 ceramics exhibit high coverable energy storage density of 4.00 J/cm3, high energy storage efficiency of 89.49%, excellent frequency (1Hz-1 kHz) and temperature stability (20-120 °C) and transmittance of >60% are achieved at 510 kV/cm at 0.2 mm. Furthermore, x = 0.008 ceramics possess the prominent current density of 420.1 A/cm2 and the prominent power density of 19.2 MW/cm3. Meanwhile, the short discharge rate of 20 ns and excellent stability of temperature (20-120 °C) are also achieved, suggesting that it is one candidate with strong potential for the application of lead-free high power capacitors.