LAUSR

Abstract Hexagonal tantalum pentoxide (δ-Ta2O5) epitaxial films were successfully prepared on Y-stabilized ZrO2 (YSZ) (111) substrates by metalorganic chemical vapor deposition. The crystal structure and optical characteristics of the deposited films as a function of the substrate temperature were investigated. High quality stoichiometric single-crystalline δ-Ta2O5 film was gained at the optimum epitaxial growth temperature of 800 °C and the full-width at half-maximum of the ω rocking curve of δ-Ta2O5 (0001) was only 0.066°. The heteroepitaxial relationship between the δ-Ta2O5 film and YSZ (111) substrate was identified as δ-Ta2O5 (0001)‖YSZ (111) with δ-Ta2O5 [ 2 1 ¯ 1 ¯ 0 ‖YSZ [10 1 ‾ ] and was illustrated in a schematic diagram. This proposed film makes adequate preparations for developing a range of ultra wide band gap semiconductor devices.