LAUSR

Abstract MgO films were deposited on Si via atomic layer deposition (ALD) using Mg(EtCp)2 and H2O precursors and their thermal stability was examined as a function of the post-deposition annealing (PDA) temperature. The characteristic self-limiting behavior of the ALD process was confirmed by changing several parameters, such as precursor pulsing times, deposition temperature, and number of cycles. The exceptional resulting step coverage was verified on a patterned wafer with a high aspect ratio. The band gap and dielectric constant of the as-deposited ALD-MgO film were extracted to be approximately 7.5 eV and 8.4, respectively, and were stable up to the PDA temperature of 700 °C. However, considerable outward diffusion of the underlying Si atoms toward MgO started to occur above 700 °C, and most of the MgO film was converted to an amorphous Mg-silicate phase at 900 °C with a thin layer of remaining MgO on top.