LAUSR

Abstract The primary purpose of this work is to introduce the second phase of graphene (G) into non-stoichiometric TiO1.80 successfully and optimize the thermoelectric properties of this composite material through high pressure and high temperature (HPHT) technology. The purpose of doping Ti powder under high pressure is to create a closed reducing atmosphere to change the ratio of titanium to oxygen in the titanium oxide base. The addition of graphene can considerably improve the electrical properties of the material and reduce its resistivity. An X-ray diffractometer, X-ray photoelectron spectrometer, scanning electron microscope, and transmission electron microscope were used to analyze and characterize the phase structure, chemical bond, micro morphology and crystal morphology of the samples. An abundance of grain boundaries and lattice dislocation defects can inhibit the lattice thermal conductivity. We also tested and analyzed the thermoelectric performance of the high-temperature and high-pressure synthetic samples through a variable temperature system. The variation of the absorption intensity of the ultraviolet UV spectrum with wavelength shows that high pressure can reduce the band gap, which is beneficial to the carrier transition and improves the conductivity of semiconductors. HPHT optimizes both the electrical and the thermal parameters of the sample. At a final sintering pressure of 5.0 GPa, the dimensionless figure of merit (zT) of the bulk composite material G/TiO1.80 was found to be 0.23 at 700 °C.