Abstract The transverse electric field dependence of the charge mobility in the end-on oriented stacked polymer crystal grains was theoretically studied in order to optimize the organic field-effect transistor architecture… Click to show full abstract
Abstract The transverse electric field dependence of the charge mobility in the end-on oriented stacked polymer crystal grains was theoretically studied in order to optimize the organic field-effect transistor architecture for intrinsically generated charge carriers. It was shown that the applied transverse electric field may reorder the on-chain charge carrier densities in end-on oriented polymer materials, which results in a decrease of the inter-chain charge carrier mobility. On the other hand, for the gate voltage attractive at the source, but repulsive at the drain, the mobility of hole increases.
               
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