LAUSR

Abstract We have addressed the behaviors density of states and thermodynamic properties of doped biased bilayer graphene for AA stacking in the context of tight binding model hamiltonian. Specially we have studied the temperature dependence of spin susceptibility and specific heat of simple bilayer graphene in the presence of external magnetic field and bias voltage. The effects of electron doping and magnetic field on specific heat have been investigated. Green’s function approach has been implemented to find the behavior of electronic density of states and thermodynamic properties of bilayer graphene. We have found the temperature dependence of specific heat and spin susceptibility for different values of magnetic field and bias voltage in the presence of doping effects. Our results for density of states of bilayer graphene in the presence of bias voltage show the increase of magnetic field reduces the band gap width. Also there is a peak in temperature dependence of specific heat for all values of magnetic field and bias voltage. Moreover the effects of magnetic field and chemical potential on the behaviors of Pauli paramagnetic spin susceptibility have been addressed in details.