LAUSR

Abstract The instability of plasma waves is influenced by many factors, such as quantum effects and electrical thermal motion. However, in sufficiently small electronic devices, viscous electron flows can be generated from the electronic interactions and govern electronic transport. The strong influence of the viscous electron fluid on plasma wave instability in field effect transistors(FET) was analyzed in this study. The theoretical results show that the instability increment and radiation frequency are functions of the Mach number, and the instability increment. Further, the computer simulative data show that the radiation frequencies increase within a certain range and the instability increment decreases owing to the presence of viscous electron flows. Therefore, it can be concluded that the viscous electron flow FETs exerts considerable influence on the characteristics of the terahertz wave.