LAUSR

Abstract Tantalum oxide nano layers were deposition on glass substrate with different thicknesses (30, 60, 90 and 120 nm) in vertical deposition angle and high vacuum condition at room temperature by using electron gun evaporation method. There were no specific peaks in XRD patterns because of amorphous nature of these layers. AFM results show that surface roughness is reduced by increasing the thickness of the layers. FESEM images show nucleation, growth, accession and integration as interconnected islands in the lower thickness and re-nucleation at higher thicknesses (120 nm). We studied Raman spectra of the produced Ta2O5 amorphous layers. The calculated optical coefficients by using Kramers-Kronig relations show that with increasing film thickness, dielectric properties, absorption coefficient and band gap energy have increased.