Abstract Electronic and optical properties of AlFeO3 and Al1−xInxFeO3 (x = 0.25, 0.5, 0.75) are studied using ab-initio calculations. Electronic structure in the vicinity of the conduction band minimum (CBM) and valence… Click to show full abstract
Abstract Electronic and optical properties of AlFeO3 and Al1−xInxFeO3 (x = 0.25, 0.5, 0.75) are studied using ab-initio calculations. Electronic structure in the vicinity of the conduction band minimum (CBM) and valence band maximum (VBM), the effective masses of holes and electrons at the gamma point are calculated. The calculated effective masses of electrons is smaller than that of holes (mc1⊥, mc1‖ (me*)
               
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