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Influence of Al 2 O 3 on the oxidation resistance of SiC ceramic: First-principle study and experiment

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Abstract The influence of Al2O3 on the oxidation resistance of SiC was studied by first-principle calculation and oxidation test. The oxidation process of the Al2O3-doped SiC ceramic divides into three… Click to show full abstract

Abstract The influence of Al2O3 on the oxidation resistance of SiC was studied by first-principle calculation and oxidation test. The oxidation process of the Al2O3-doped SiC ceramic divides into three stages. At first, Al atom diffuses into the generated SiO2 and substitutes Si atom to form Al O Si ring. Then, the ring is damaged due to the reaction between the O atom in Al O bond and CO molecule, causing a CO2 molecule and an O vacancy formation. Finally, once O2 or another CO molecule approaches O vacancy, Al O O Si or Al O C Si ring will be formed to recover the network structure of SiO2.

Keywords: first principle; oxidation; sic ceramic; resistance sic; influence; oxidation resistance

Journal Title: Corrosion Science
Year Published: 2018

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