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Abstract In this paper, a hexagonal M-type barium ferrite (BaM) film with a high remanence ratio was deposited on a sapphire substrate by the pulsed laser deposition (PLD) method. The… Click to show full abstract
Abstract In this paper, a hexagonal M-type barium ferrite (BaM) film with a high remanence ratio was deposited on a sapphire substrate by the pulsed laser deposition (PLD) method. The characterization results showed that the film growth at a high substrate temperature (950 °C) has a high out-of-plane orientation, good crystallinity, and smooth surface. Additionally, the hysteresis loops indicated that the film deposited at a high substrate temperature has a high remanence ratio of 0.53, which is higher than that of the other reported BaM films prepared by the PLD method.
Journal Title: Chemical Physics Letters
Year Published: 2020
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