LAUSR

Abstract Sn-doped β-Ga2O3 nanowires were fabricated by V-L-S mechanism using a thermal process at 850 °C. XRD patterns revealed that the Sn4+ ions substituted at Ga3+ lattice sites. HRTEM confirmed that both the Sn-doped and Sn-free β-Ga2O3 nanowires grew in the [0 0 2] direction. Photoluminescence results showed the enhanced intensities in 2.52 and 2.80 eV by 4.36 and 4.01 times upon to 10 wt% Sn, due to the intrinsic defects V O 2 - and Schottky defects V O 2 - a n d V Ga 3 + ; and extrinsic defects of Sn 4 + Ga 3 + and Sn 4 + i . Our results show that the Sn-doped Ga2O3 nanowires have potential applications in nanophotonics and light-emitting devices in long-wavelengths.