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Abstract Two 4H silicon carbide (SiC) radiation detectors based on Schottky diode were fabricated with high-quality lightly doped 4H-SiC epitaxial layer with sensitive volumes of 5 mm × 5 mm × 20 μm and 3 mm × 3 mm × 100 μm; their dark… Click to show full abstract
Abstract Two 4H silicon carbide (SiC) radiation detectors based on Schottky diode were fabricated with high-quality lightly doped 4H-SiC epitaxial layer with sensitive volumes of 5 mm × 5 mm × 20 μm and 3 mm × 3 mm × 100 μm; their dark current were in the range of 0.3 pA to 63 nA at a bias voltage of 600 V. These detectors were used in detection of alpha particles (emitted by 237 Np, 238 Pu, 243 Am and 244 Cm source) and oxygen particles (generated by the HI-13 accelerator with energy of 86 MeV). The experiment results showed that both detectors worked stably with a charge collection efficiency nearly 99.3% and an energy resolution of 1%–3%, demonstrating their, wide application prospect in the detection of charged particles and especially in heavy charged particles.
Journal Title: Diamond and Related Materials
Year Published: 2017
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