LAUSR

Abstract Modulation of carrier density in graphene has been demonstrated on single-crystalline or polymer ferroelectrics as gating dielectric. However, its tuning from p-type to n-type in air at room temperature has not yet been reported. In this paper, such a tuning is realized on polycrystalline PbZr 0.52 Ti 0.48 O 3 (PZT) ceramic under polarization field in the range of – 22.5 kV/cm to 22.5 kV/cm through the construction of a “graphene/PZT + suspended graphene” network film. The maximum hole and electron density of graphene in our fabricated Hall bar device are measured to be 6.3 × 10 13  cm −2 and 1.7 × 10 13  cm −2 respectively. There exhibit certain features in graphene's Raman spectrums corresponding to its transition from p-type to n-type with relationship to the PZT surface morphology and the contact status between graphene and PZT surface. At last, an in-plane graphene PN junction is demonstrated on PZT ceramic as well.