LAUSR

This paper proposes a system-level comparison between diamond and SiC power devices. It highlights the benefits of diamond semiconductors for power electronics applications. Actual diamond power devices are fabricated and characterized (DC, AC small-signal and large-signal power switching in a buck converter). Thanks to the experimental data, the models of diamond devices are discussed and the expected performances of future diamond semiconductors in power converters are presented. These performances are compared to the commercialized SiC Schottky diodes for a given application. Our analysis shows that diamond devices can be used to increase power converters' performances especially at high temperature. It is demonstrated that for a 450K junction temperature diamond semiconductors can divide by three the semiconductor losses and heatsink volume in comparison to SiC devices. We also demonstrate that the switching frequency with diamond devices can be five times higher than with SiC devices, with lower total semiconductor losses and smaller heatsink in diamond based power converters. This system level analysis clearly shows the future improvements of power converters' efficiency and their power densities thanks to diamond power devices. The need of a PRE-PRINT (initial submitted article). Accepted version (Elsevier, DRM2020): https://doi.org/10.1016/j.diamond.2020.108154 specific junction temperature management, required to use the entire benefits of diamond properties, is finally demonstrated and discussed.