Abstract Much attention has been devoted to the synthesis of dyes that absorb near-infrared (NIR) radiation because of numerous demands for them as functional materials. Given that NIR sensitizers applicable… Click to show full abstract
Abstract Much attention has been devoted to the synthesis of dyes that absorb near-infrared (NIR) radiation because of numerous demands for them as functional materials. Given that NIR sensitizers applicable to p-type dye-sensitized solar cell (DSSC) devices are extremely rare, π-extended dibenzo-BODIPY sensitizer 1 containing triphenylamine and nitrothiophene units was synthesized; the absorption spectrum of 1 showed an intense absorption band at 730 nm with a molar extinction coefficient of 7.14 × 104 M−1 cm−1. A p-type DSSC device with a 1-loaded NiO electrode was fabricated and its cell performance was investigated. It showed an open circuit voltage (VOC), a short circuit current density (JSC), and a fill factor (FF) of 79 mV, 0.61 mA cm−2, and 0.25, respectively. Consequently, the power conversion efficiency was 0.012%. Its performance was low, mainly owing to very fast recombination between the NiO and reduced dye at the surface of the electrode. However, EQE measurement showed that the 1-loaded p-type DSSC devices convert photons into current at wavelengths up to 850 nm, so further investigation to improve the cell performance is deserved.
               
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