LAUSR

Porous gallium nitride (PGaN) layers were fabricated by metal-assisted photochemical etching (MaPCE) using electrodeposited platinum nanoparticles (PtNPs) or gold nanoparticles (AuNPs) as catalysts. After identification of a suitable negative potential and appropriate cyclic voltammetry (CV) conditions, high-density PtNPs or AuNPs were deposited onto a planar GaN substrate. Based on the concrete numerical values of energy levels, the generation, transfer and consumption of electrons and holes, and the assumption that localized galvanic cells are formed, an etching mechanism was proposed which may provide theoretical guidance for future work on etching of GaN and other semiconductor materials.