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Abstract A particular wafer processing step involves deposition of a Ti thin film (˜6 nm to ˜13 nm) on Si, under processing conditions intended to form a silicide with specific electrical properties.… Click to show full abstract
Abstract A particular wafer processing step involves deposition of a Ti thin film (˜6 nm to ˜13 nm) on Si, under processing conditions intended to form a silicide with specific electrical properties. It is difficult, however, to distinguish silicide formation from mere elemental inter-diffusion. Routine laboratory XPS, using an Al X-Ray source(1486.6ev), does have an appropriate probing depth for the film stack involved, but the chemical shifts in Ti (2p) and Si(2p) are too small (
Keywords:
use kll;
shifts auger;
kll auger;
auger parameter;
auger shifts;
xps
Journal Title: Journal of Electron Spectroscopy and Related Phenomena
Year Published: 2019
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Journal Title: Journal of Electron Spectroscopy and Related Phenomena
Year Published: 2019
Link to full text (if available)
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recommendations!