Abstract In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold… Click to show full abstract
Abstract In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of −0.97 (+0.6) V and −1.22 (+0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection.
               
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