LAUSR

Abstract The present study described a photonic-crystal-based ring resonator pin modulator on an InP-substrate. The device geometry was based on a single ring resonator coupled to one straight waveguide by creating line defect holes through slab layer stack InP/InGaAsP/InP having a hexagonal lattice. The radius of the hole was calculated to be 187 nm with a lattice constant of 500 nm. The distribution of carriers and the electrical field in the guiding and cladding layers determined the effective refractive index of the ring resonator. Transient analysis of the pin modulator was carried out by applying a pulse to the electrodes that switched between 0 and −7 V. The frequency response of the ring resonator modulator shows over 300 GHz of bandwidth.