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Abstract A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies… Click to show full abstract
Abstract A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing that is achieved by rapid thermal annealing of the sample with the two sections capped by silicon oxynitride (SiO x N y ) and silicon dioxide (SiO 2 ), respectively. The device is capable of producing laser emission at either 911 or 953 nm wavelengths depending on the current applied to either section of the laser stripe.
Journal Title: Optik
Year Published: 2017
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