LAUSR

Abstract C u 2 N i S n S 4 is non-toxic earth abundant material and a promising quaternary semiconductor compound. It is conspicuous and suitable class of material for the manufacturing of high efficiency, low cost and sustainable thin film photovoltaic cell. A novel structure C N T S / Z n S / Z n ( O , S ) / F T O is proposed in this work for the efficiency enhancement of C N T S based photovoltaic cell. Up till now there has been no model proposed to use Z n ( O , S ) as electron transport layer for C N T S based device. In this work we proposed for the first time a novel Z n ( O , S ) electron transport layer for the efficiency enhancement of C N T S thin film photovoltaic cell. Device modeling is performed on solar cell capacitance simulator (SCAPS) program under 1.5 A M illumination spectrum. Promising optimized functional parameters had been achieved with the conversion efficiency of 17.06%, open circuit voltage ( V o c ) of 664 m V , short-circuit current ( J s c ) of 31.19 m A / c m 2 and fill factor ( F F ) of 82.37%. The above results will give an imperative guideline for the feasible fabrication of high efficiency C N T S based photovoltaic cells.