LAUSR

Abstract The main aim of this paper is to enhance the efficiency of solar cell by reducing the reflectivity with the cost effective approach. If resistivity of the silicon wafer is increased the wafer cost is decreased. Hence, the high resistive p-type silicon wafer is used here to fabricate the porous silicon. Electro chemical etching process is used to synthesize the porous silicon from the high resistive bulk silicon. The etching parameters like current density is maintained as constant as 10 mA/cm2 and etching time are varied as 60, 120 and 180 min. Electrochemical etchant like HF and isopropanol are mixed in the ratio of 1:2. The porosity is determined by gravimetric method and the photoluminescence and spectrum absorption are investigated by using the spectroflurometer. Based on the result, refractive index and band gap is determined. The obtained photoluminescence response shows that if the porosity of the Psi is increased, then the band gap is also increased. The maximum porosity achieved is 84.21% for the etching time 180 min. and maximum energy band gap is obtained as 1.8921 eV for the wavelength 655.35 nm. Hence, it is proved that low cost, high resistive wafer is also capable to fabricate the anti reflective solar cell.