LAUSR

Abstract The OH− doped 2Bi2O3–3GeO2 (Bi4Ge3O12, BGO) glass was prepared via conventional melt cast-quenching technique, and OH− doped Bi4Ge3O12 (BGO) crystal has been grown by Vertical Bridgman method for comparison. Absorption, transmittance, near infrared (NIR) emission, and XPS spectra were measured. The infrared transmittance spectra reflect the characteristics of OH− absorption in doped BGO glasses and crystals. Broad NIR emission (under excitation at 785 nm) centered at about 1300 nm was detected in OH− doped BGO glasses, and the measured fluorescent lifetime is several hundred microseconds. The introduced OH− might make Bi3+ lower valence ions. The XPS measurement of the Bi 4f region reveals that the NIR emission should be related to lower valence Bi ions. The OH− doped BGO glass with broad NIR emission may be used as effective amplifier for signals in silica fiber.