LAUSR

Abstract Novel InTiO thin films (100 and 200 nm) were prepared from thermal evaporation technique. The thickness and annealing effects on structure, morphology, electrical and photoluminescence (PL) behaviors were investigated. X-ray diffraction patterns showed the mixed phase of cubic-In2O3 and rutile-TiO2 structure. Crystallinity of the films increases with increase of annealing temperature and thickness. Scanning electron microscope images showed the uniform distribution of grains over the entire film surface. Size of the grains is increases with increase of annealing temperature and thickness. Thickness and annealing effect on electrical studies revealed the low resistivity, high mobility and high conductivity. Photoluminescence spectra imply the broad tunable visible (green and yellow) emissions. The acquired results with imperative properties are to be a prime role for the potential use in electronic and opto-electronic devices in future.