LAUSR

Abstract The silicon-based PIN-type photodiode was designed and fabricated employing conventional bipolar planar technology using different annealing process to reduce the leakage current and detector energy resolution. In this process the effects of the Annealing and gas flow rate on the detector electrical properties such as capacitance-voltage (C–V) of MOS capacitors and current-voltage (I–V) of diodes and alpha spectral measurement are specified. Silicon PIN radiation detectors are made on four similar fabrication process with different post thermal annealing at constant temperature and different hydrogen gas flow (10 sccm–60 sccm). The study results proves that the detector with 15 sccm hydrogen gas flow shows lower leakage current due to the lower remained interface traps density at the Si/SiO2 interface. Si PIN diodes were fabricated, by considering all the important aspects discussed in this paper, and consequently an excellent spectral response was observed.