Photo from wikipedia
Abstract In present investigation polycrystalline copper selenide (CuSe) film was grown on glass substrate via economical & non vacuum based screen-printing and sintering technique. Optimum parameters to grow good quality… Click to show full abstract
Abstract In present investigation polycrystalline copper selenide (CuSe) film was grown on glass substrate via economical & non vacuum based screen-printing and sintering technique. Optimum parameters to grow good quality films were found. Grown film was analyzed structurally, morphologically, optically and electrically. The film was uniform and had good adherence to substrate. Polycrystalline nature of film with hexagonal structure was confirmed through XRD analysis. Presence of copper (Cu) and selenium (Se) was exhibited by EDS spectrograph. Direct type of optical band gap of 2.15 eV for the CuSe film was established by optical characterization. The temperature dependent electrical conductivity (DC) confirmed the semiconducting behavior of the film. Larger forward current at all voltages indicates the reasonably good conductivity of the film. Hall Effect measurement shows p-type of conduction for the film.
Journal Title: Optik
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!