LAUSR

Abstract We present a simultaneously thickness-graded quantum barriers and composition-graded electron blocking layer as a promising and efficient design for green light-emitting diodes. The device, we proposed, shows decreased efficiency droop at high current density. The efficiency reduction of proposed device is reduced up to ∼28 % at 100 A cm−2. The enhancement of optoelectronic characteristics of proposed device is attributed to better transport of carriers across active layers by the graded thickness of quantum barriers as well as due to the composition-graded graded electron blocking layer.