Abstract A series of temperature-stable microwave dielectric (1 − x)CeVO 4 -xTiO 2 (0.0 ≤ x ≤ 0.4) ceramics were prepared by using solid-state reaction method. All the samples could be sintered well at 1025 °C-1150 °C for… Click to show full abstract
Abstract A series of temperature-stable microwave dielectric (1 − x)CeVO 4 -xTiO 2 (0.0 ≤ x ≤ 0.4) ceramics were prepared by using solid-state reaction method. All the samples could be sintered well at 1025 °C-1150 °C for 2 h. X-ray diffraction (XRD) and energy-dispersive spectroscopy (EDS) analysis revealed that rutile TiO 2 and tetragonal CeVO 4 phases coexisted in the ceramics. Raman spectroscopy and infrared spectra were used to study relationship between structure and microwave dielectric properties. (1 − x)CeVO 4 -xTiO 2 ceramics with 0.15 ≤ x ≤ 0.20 sintered at 1100 °C for 2 h exhibited good microwave dielectric properties with relative permittivities (e r ) ∼ 11.2–14.2, quality factor (Q × f) values ∼ 7950–22,100 GHz (at 9.2–9.5 GHz), and near zero temperature coefficient of resonant frequencies (τ f ) ∼ −1.2 to +2.8 ppm/ o C. The infrared spectra study showed that the external vibrations of CeVO 4 had the most remarkable effects on the dielectric constant. All these results indicate that this system is a good candidate for microwave devices applications in the future.
               
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