Abstract Nitrogen doped indium oxide (InON) and indium tin oxide (ITON) thin films were fabricated with reactive sputtering in nitrogen-rich plasmas for high temperature thermocouples. Different annealing processes were applied… Click to show full abstract
Abstract Nitrogen doped indium oxide (InON) and indium tin oxide (ITON) thin films were fabricated with reactive sputtering in nitrogen-rich plasmas for high temperature thermocouples. Different annealing processes were applied to improve the performance of indium oxide-based thin film thermocouples. The microstructural changes in the films were revealed by X-ray photoelectron spectroscopy (XPS). Metastably retained nitrogen in as-deposited film was transformed into In2O3 and/or oxynitrides after annealing. And significant improvement of linearity and high temperature stability was achieved in N2-Air annealed ITO thin-film thermocouples.
               
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