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Pressure-induced electronic topological transitions in the charge-density-wave material In4Se3

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Abstract High-pressure in situ angle dispersive X-ray diffraction (ADXRD) measurements were performed on the charge-density-wave (CDW) material In 4 Se 3 up to 48.8 GPa. Pressure-induced structural changes were observed at… Click to show full abstract

Abstract High-pressure in situ angle dispersive X-ray diffraction (ADXRD) measurements were performed on the charge-density-wave (CDW) material In 4 Se 3 up to 48.8 GPa. Pressure-induced structural changes were observed at 7.0 and 34.2 GPa, respectively. Using the CALYPSO methodology, the first high-pressure phase was solved as an exotic Pca 2 1 structure. The compressional behaviors of the initial Pnnm and the Pca 2 1 phases were all determined. Combined with first-principle calculations, we find that, unexpectedly, the Pnnm phase probably experiences twice electronic topological transitions (ETTs), from the initial possible CDW state to a semimetallic state at about 2.3 GPa and then back to a possible CDW state at around 3.5 GPa, which was uncovered for the first time in CDW systems. In the both possible CDW states, pressure provokes a decrease of band-gap. The observation of a bulk metallic state was ascribed to structural transition to the Pca 2 1 phase. Besides, based on electronic band structure calculations, the thermoelectric property of the Pnnm phase under compression was discussed. Our results show that pressure play a dramatic role in tuning In 4 Se 3 's structure and transport properties.

Keywords: density wave; charge density; electronic topological; pressure induced; pressure; topological transitions

Journal Title: Journal of Alloys and Compounds
Year Published: 2017

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