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Abstract Highly-doped ZnO:Al,N films were grown under oxygen-rich conditions on Si substrates by magnetron sputtering using a layer-by-layer growth technique. An investigation of the highly-doped ZnO:Al,N films is attractive for… Click to show full abstract
Abstract Highly-doped ZnO:Al,N films were grown under oxygen-rich conditions on Si substrates by magnetron sputtering using a layer-by-layer growth technique. An investigation of the highly-doped ZnO:Al,N films is attractive for obtaining p -type conductivity in ZnO films as well as for an improvement of performance of ZnO-based ultraviolet (UV) detectors. X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis (EDX), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES) and Secondary ion mass spectrometry (SIMS) were used for the samples characterization. An effect of high Al and N doping on structure and electronic properties of ZnO films was studied and discussed.
Journal Title: Journal of Alloys and Compounds
Year Published: 2017
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