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Abstract Bilayer of NiO x /TiO 2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device.… Click to show full abstract
Abstract Bilayer of NiO x /TiO 2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS) behavior, which with appropriate resistance ratio of ∼10 3 , switching cycle endurance for 10 2 and long retention time for 10 4 s, is observed in the bilayer NiO x /TiO 2 based device. Construction of contact-potential barrier, formation and rupture of a localized conduction filaments and migration of oxygen vacancy existed in the interface near electrodes co-contribute to the enhanced RS memory effects, but the migration of Ag + , Ni 2 x + and diffusion of oxygen vacancies are the dominated ones. This work might give an insight into the mechanism of RS memory behaviors of an oxide-stacked structure device.
Journal Title: Journal of Alloys and Compounds
Year Published: 2017
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