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Pressure-induced structural transitions and electronic topological transition of Cu2Se

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Abstract We performed high-pressure in situ angle dispersive X-ray diffraction (ADXRD) experiments combined with CALYPSO methodology and band structure calculations on Cu2Se up to 42.1 GPa at room temperature, and four phases… Click to show full abstract

Abstract We performed high-pressure in situ angle dispersive X-ray diffraction (ADXRD) experiments combined with CALYPSO methodology and band structure calculations on Cu2Se up to 42.1 GPa at room temperature, and four phases were identified. The initial low-pressure phase is assigned to the previously proposed monoclinic structure (space group C2/c). Phase II (space group C2/m) and phase III (space group C2/m) emerged at 3.3 GPa. Moreover, a bulk metallic phase IV (space group Pca21) emerged at 7.4 GPa. We find that, unexpectedly, semimetallic phase III probably experiences a pressure-induced electronic topological transition (ETT) to another semimetallic state at about 20.0–25.0 GPa. Our results show that pressure plays a dramatic role in tuning Cu2Se's crystal structures and electronic states.

Keywords: topological transition; phase; space group; electronic topological; pressure induced; pressure

Journal Title: Journal of Alloys and Compounds
Year Published: 2018

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