Abstract High quality β-Ga2O3 film is grown by using N2O as reaction gas for the fabrication of high performance solar-blind-ultraviolet photodetector. Compared with traditional solar-blind-ultraviolet photodetector based on β-Ga2O3 film… Click to show full abstract
Abstract High quality β-Ga2O3 film is grown by using N2O as reaction gas for the fabrication of high performance solar-blind-ultraviolet photodetector. Compared with traditional solar-blind-ultraviolet photodetector based on β-Ga2O3 film grown with O2, the reported solar-blind-ultraviolet photodetector exhibits higher photoresponsivity of 26.1 A/W, larger on/off ratio (I255 nm light/Idark) of 104, and faster response speed (a rise time of 0.48 s and a decay time of 0.18 s at 10 V. The high photoresponsivity and fast response speed of the reported β-Ga2O3 solar-blind-ultraviolet photodetector can be attributed to the reduction of scattering or/and trapped centre of photo-generated carriers formed in the film grown with N2O.
Journal Title: Journal of Alloys and Compounds
Year Published: 2018
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