LAUSR

Abstract Near infrared electroluminescence was demonstrated from a p-NiO/n-InN/n-SiC heterojunction light-emitting diode by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited typical rectification characteristic with a turn-on voltage of ∼1.1 V. Under forward bias, dominant near infrared emissions (NIR) peaked around 1500 nm were detected at room temperature. The NIR emissions were attributed to the band-edge emission of InN film according to the photoluminescence spectrum of InN layer. Moreover, the mechanism of the current transport and light-output-current characteristic were also discussed.